growth temperature

After GaAs NWs growth, axial and radial heterostructure can be realized by tuning growth temperature.

在生长完GaAs纳米线后，通过改变生长温度可以实现轴向、径向的异质转变。

Growth Temperature and Classification in Pythium

腐霉的生长温度与分类

As for hyphae growth temperature, the optimum was 25~ 28 ℃, grew well under the 30 ℃ condition, lethal temperature was 55 ℃;

菌丝生长发育最适温度范围25~28℃，30℃下培养生长较好；分生孢子致死温度为55℃10min；

It is shown that K ( Ta, Nb) O_3 crystal exists in cubic phase when the content of Ta is higher than a certain value at room temperature and no phase transition occurs from growth temperature to room temperature.

发现含钽量大于一定量后，K（Ta，Nb）O3晶体在室温下以立方相存在，在生长温度至室温间无相变。通常说的一维Ising模型无相变是有条件的。

The results showed that 28~ 35 ℃ was suitable for the growth of YLS, 35 ℃ was their most suitable growth temperature and 36~ 48 h was the best time for studying them.

结果表明：28~35℃比较适宜YLS的生长，35℃为最佳生长温度，而36~48h是研究YLS的最佳时间。

By keeping the growth temperature low and preventing it from microbes, we obtained high-quality single crystals of LAP.

通过来取低温生长和防菌措施，解决了上述问题，长出了光学质量好的LAP单晶。

ZnO thin films were grown on Cu/ Si ( 111) template by atmospheric pressure MOCVD. The effect of the growth temperature of buffer layer on the properties of ZnO films was studied.

采用常压MOCVD方法在Cu/Si（111）基板上生长ZnO薄膜，研究了缓冲层的生长温度对ZnO外延膜性能的影响。

We analyse systematically the relation of growth temperature, source gas flux ratio, germane incorporation and growth rate, and research on their influence on the quality of the film.

对于生长中的温度，气源注入流量比，组分和生长速度之间的关系和它们对外延层质量的影响作了系统的研究；

It is suggested that growth temperature of the AlN buffer layer influences GaN morphology by forming different AlN seed size and density on the Si ( 111) substrate during the initial growth of the buffer layer.

进一步解释了GaN外延层表面形貌中凹坑的形成及凹坑与缓冲层生长温度的关系.结果表明，温度的高低通过影响缓冲层初始成核密度和成核尺寸来影响外延层表面形貌。

In order to enhance the incorporation of indium into Ga xAl yIn 1-x-y N, lower growth temperature and higher input ⅴ/ ⅲ ratio should be used and the decomposed fraction of ammonia should be reduced.

为增强铟的并入，应采用低的生长温度，高的/比，氮载气而且须要设法降低到达生长界面前氨的分解。

According to the temperature parameters of growth system for semiconductor thin film, a method to calibrate the thin film growth temperature by ECR-PEMOCVD based on double thermocouple is introduced.

通过简单叙述Ⅲ族GaN基氮化物薄膜，以及了解半导体薄膜生长系统的温度变化情况重要性，提出了基于双热电偶校准薄膜生长装置ECR-PEMOCVD温度的方法。

The growth temperature of the GaN buffer layer must be controlled at 550 ℃.

GaN缓冲层生长温度必须控制在550℃。

Microcalorimetric investigations of growth temperature and the optimum acidity of petroleum bacteria

微量热法对石油菌生长温度和最适酸度的研究

The fit range of growth temperature is 20-30 ℃, and the most suitable one is 27 ℃.

生长适宜温度范围为20～30℃，最适为27℃；

The study shows that the morphology and diameter of ZnS nanostructures synthesized by thermal evaporation correlate closely with the growth temperature of ZnS nanostructures.

分析表明：ZnS纳米结构的形貌和直径与纳米结构的生长温度有关。

Using higher growth temperature of AlAs up barrier, interfacial smooth can be greatly improved and at the same time maintained the InAs islands.

同时，通过升温生长AlAs上势垒的方法，可以实现在保证InAs量子点岛结构不被破坏的基础上，实现界面平整度大幅度优化。

Studies on the Suitable Growth Temperature and the Optimum Growth Temperature of Bacteria in Yoghurt by Microcalorimetry

微量量热法研究酸奶菌种的适宜生长温度及最佳生长温度

Study on Thin Film Growth Temperature by ECR-PEMOCVD Based on the Double Thermocouples

基于双热电偶校准ECR-PEMOCVD薄膜生长温度分析研究